N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-4L
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N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-4L
TO-247-4

NTH4L030N120M3S

DigiKey Part Number
5556-NTH4L030N120M3S-ND
Manufacturer
onsemi
Manufacturer Product Number
NTH4L030N120M3S
Description
SILICON CARBIDE (SIC) MOSFET EL
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
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In-Stock: 925
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 438,86000 Ft4 438,86 Ft
302 691,26067 Ft80 737,82 Ft
1202 308,24617 Ft276 989,54 Ft
5102 228,74271 Ft1 136 658,78 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 438,86000 Ft
Unit Price with VAT:5 637,35220 Ft