N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L
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N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L
TO-247-4

NTH4L020N090SC1

DigiKey Part Number
5556-NTH4L020N090SC1-ND
Manufacturer
onsemi
Manufacturer Product Number
NTH4L020N090SC1
Description
SILICON CARBIDE MOSFET, NCHANNEL
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
196 nC @ 15 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
4415 pF @ 450 V
FET Feature
-
Power Dissipation (Max)
484W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
NTH4L02
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In-Stock: 192
Factory Stock: 4 500
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
19 425,48000 Ft9 425,48 Ft
306 105,40867 Ft183 162,26 Ft
1205 842,21667 Ft701 066,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:9 425,48000 Ft
Unit Price with VAT:11 970,35960 Ft