Bipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
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MJ11012G

DigiKey Part Number
MJ11012GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
MJ11012G
Description
TRANS NPN DARL 60V 30A TO204
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
Datasheet
 Datasheet
EDA/CAD Models
MJ11012G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tray
Part Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A, 5V
Power - Max
200 W
Frequency - Transition
4MHz
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-204 (TO-3)
Base Product Number
MJ11012
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In-Stock: 136
Factory Stock: 900
Check for Additional Incoming Stock
Quantity
All prices are in HUF
Tray
QuantityUnit PriceExt Price
13 226,44000 Ft3 226,44 Ft
102 215,08800 Ft22 150,88 Ft
1001 644,48240 Ft164 448,24 Ft
5001 467,55592 Ft733 777,96 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 226,44000 Ft
Unit Price with VAT:4 097,57880 Ft
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