Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
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KSD1616AGBU

DigiKey Part Number
KSD1616AGBU-ND
Manufacturer
Manufacturer Product Number
KSD1616AGBU
Description
TRANS NPN 60V 1A TO-92-3
Manufacturer Standard Lead Time
30 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
160MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
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In-Stock: 20 979
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All prices are in HUF
Bulk
QuantityUnit PriceExt Price
1180,36000 Ft180,36 Ft
10111,22200 Ft1 112,22 Ft
10070,77460 Ft7 077,46 Ft
50053,24628 Ft26 623,14 Ft
1 00047,58498 Ft47 584,98 Ft
2 00042,81880 Ft85 637,60 Ft
5 00037,65382 Ft188 269,10 Ft
10 00034,45845 Ft344 584,50 Ft
50 00028,86448 Ft1 443 224,00 Ft
Manufacturers Standard Package
Unit Price without VAT:180,36000 Ft
Unit Price with VAT:229,05720 Ft