Name: G3R350MT12J
Brand: Navitas Semiconductor, Inc.
SKU: 1913-G3R350MT12J-ND
Price: 1434.94601 HUF
Availability: OutOfStock

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G3R350MT12J
DigiKey Part Number	1913-G3R350MT12J-ND
Manufacturer	Navitas Semiconductor, Inc.
Manufacturer Product Number	G3R350MT12J
Description	SIC MOSFET N-CH 11A TO263-7
Customer Reference
Detailed Description	N-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7
Datasheet	Datasheet
EDA/CAD Models	G3R350MT12J Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.69V @ 2mA
Mfr Navitas Semiconductor, Inc.	Gate Charge (Qg) (Max) @ Vgs 12 nC @ 15 V
Series G3R™	Vgs (Max) ±15V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 800 V
Part Status Last Time Buy	Power Dissipation (Max) 75W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 1200 V	Supplier Device Package TO-263-7
Current - Continuous Drain (Id) @ 25°C 11A (Tc)	Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drive Voltage (Max Rds On, Min Rds On) 15V	Base Product Number G3R350
Rds On (Max) @ Id, Vgs 420mOhm @ 4A, 15V