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N-Channel 1200 V 21A (Tc) 147W (Tc) Through Hole TO-247-4
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MSC180SMA120B4N

DigiKey Part Number
150-MSC180SMA120B4N-ND
Manufacturer
Microchip Technology
Manufacturer Product Number
MSC180SMA120B4N
Description
MOSFET SIC 1200 V 180 MOHM TO-24
Manufacturer Standard Lead Time
4 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 21A (Tc) 147W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Microchip Technology
Series
MSiC™ MA
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
225mOhm @ 8A, 20V
Vgs(th) (Max) @ Id
5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
481 pF @ 1.2 kV
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 150
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Quantity
All prices are in HUF
Bulk
QuantityUnit PriceExt Price
11 979,39000 Ft1 979,39 Ft
251 825,65320 Ft45 641,33 Ft
1001 588,63840 Ft158 863,84 Ft
Unit Price without VAT:1 979,39000 Ft
Unit Price with VAT:2 513,82530 Ft