N-Channel 1200 V 35A (Tc) 182W (Tc) Surface Mount TO-263-7
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MSC080SMA120SDT/R

DigiKey Part Number
150-MSC080SMA120SDT/R-ND
Manufacturer
Microchip Technology
Manufacturer Product Number
MSC080SMA120SDT/R
Description
MOSFET SIC 1200 V 80 MOHM TO-263
Manufacturer Standard Lead Time
4 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 35A (Tc) 182W (Tc) Surface Mount TO-263-7
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Microchip Technology
Series
MSiC™ MA
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
838 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
182W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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In-Stock: 797
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Quantity
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Bulk
QuantityUnit PriceExt Price
13 794,24000 Ft3 794,24 Ft
253 500,32000 Ft87 508,00 Ft
1003 046,08000 Ft304 608,00 Ft
Unit Price without VAT:3 794,24000 Ft
Unit Price with VAT:4 818,68480 Ft