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N-Channel 1200 V 38A (Tc) 192W (Tc) Through Hole TO-247-4
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MSC060SMB120B4N

DigiKey Part Number
150-MSC060SMB120B4N-ND
Manufacturer
Microchip Technology
Manufacturer Product Number
MSC060SMB120B4N
Description
MOSFET SIC 1200 V 60 MOHM TO-247
Manufacturer Standard Lead Time
4 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 38A (Tc) 192W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Microchip Technology
Series
mSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
80mOhm @ 8A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 18 V
Vgs (Max)
+21V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1143 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55°C ~ 175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 120
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 341,32000 Ft2 341,32 Ft
252 161,95760 Ft54 048,94 Ft
1001 880,10230 Ft188 010,23 Ft
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 341,32000 Ft
Unit Price with VAT:2 973,47640 Ft