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N-Channel 1200 V 69A (Tc) 310W (Tc) Through Hole TO-247-4
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MSC030SMB120B4N

DigiKey Part Number
150-MSC030SMB120B4N-ND
Manufacturer
Microchip Technology
Manufacturer Product Number
MSC030SMB120B4N
Description
MOSFET SIC 1200 V 30 MOHM TO-247
Manufacturer Standard Lead Time
4 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 69A (Tc) 310W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Microchip Technology
Series
mSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
40mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 18 V
Vgs (Max)
+21V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2201 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
310W (Tc)
Operating Temperature
-55°C ~ 175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 109
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 737,78000 Ft3 737,78 Ft
253 446,32040 Ft86 158,01 Ft
1003 001,11730 Ft300 111,73 Ft
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 737,78000 Ft
Unit Price with VAT:4 746,98060 Ft