LFUSCD20120B
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LFUSCD20120B
1200 V, 80 mOhm SiC MOSFET

LSIC1MO120E0160

DigiKey Part Number
F11005-ND
Manufacturer
Littelfuse Inc.
Manufacturer Product Number
LSIC1MO120E0160
Description
SICFET N-CH 1200V 22A TO247-3
Manufacturer Standard Lead Time
29 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 22A (Tc) 125W (Tc) Through Hole TO-247AD
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Littelfuse Inc.
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 20 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Base Product Number
LSIC1MO120
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In-Stock: 2 221
Factory Stock: 1 350
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 952,60000 Ft3 952,60 Ft
302 405,41867 Ft72 162,56 Ft
1202 364,76967 Ft283 772,36 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 952,60000 Ft
Unit Price with VAT:5 019,80200 Ft