N-Channel 100 V 110A (Tc) 480W (Tc) Through Hole TO-3P
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IXTQ110N10P

DigiKey Part Number
IXTQ110N10P-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTQ110N10P
Description
MOSFET N-CH 100V 110A TO3P
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 110A (Tc) 480W (Tc) Through Hole TO-3P
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Polar
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
480W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ110
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 798,92000 Ft2 798,92 Ft
301 632,25800 Ft48 967,74 Ft
1201 375,69033 Ft165 082,84 Ft
5101 218,34686 Ft621 356,90 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 798,92000 Ft
Unit Price with VAT:3 554,62840 Ft