N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
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IXTP8N65X2M

DigiKey Part Number
IXTP8N65X2M-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTP8N65X2M
Description
MOSFET N-CH 650V 4A TO220
Manufacturer Standard Lead Time
41 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Ultra X2
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
IXTP8
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In-Stock: 11
Factory Stock: 1 450
Check for Additional Incoming Stock
Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 352,70000 Ft1 352,70 Ft
50689,44280 Ft34 472,14 Ft
100625,21460 Ft62 521,46 Ft
500512,69668 Ft256 348,34 Ft
1 000476,56122 Ft476 561,22 Ft
2 000460,00150 Ft920 003,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 352,70000 Ft
Unit Price with VAT:1 717,92900 Ft