N-Channel 100 V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH)
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IXTH200N10T

DigiKey Part Number
238-IXTH200N10T-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTH200N10T
Description
MOSFET N-CH 100V 200A TO247
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Trench
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
550W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH200
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In-Stock: 4 305
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 400,12000 Ft3 400,12 Ft
302 014,02000 Ft60 420,60 Ft
1201 710,02433 Ft205 202,92 Ft
5101 572,72086 Ft802 087,64 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 400,12000 Ft
Unit Price with VAT:4 318,15240 Ft