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N-Channel 1200 V 85A (Tc) 223.2W (Tc) Through Hole ISO247-4L
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N-Channel 1200 V 85A (Tc) 223.2W (Tc) Through Hole ISO247-4L
TO-247-4

IXSJ80N120R1K

DigiKey Part Number
238-IXSJ80N120R1K-ND
Manufacturer
IXYS
Manufacturer Product Number
IXSJ80N120R1K
Description
1200V 18M (30A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 85A (Tc) 223.2W (Tc) Through Hole ISO247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
23.4mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 18 V
Vgs (Max)
+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
4556 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
223.2W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
ISO247-4L
Package / Case
TO-247-4
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In-Stock: 41
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
19 739,44000 Ft9 739,44 Ft
306 325,96000 Ft189 778,80 Ft
1206 087,15000 Ft730 458,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:9 739,44000 Ft
Unit Price with VAT:12 369,08880 Ft