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N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
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N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
TO-247-3

IXSJ25N120R1

DigiKey Part Number
238-IXSJ25N120R1-ND
Manufacturer
IXYS
Manufacturer Product Number
IXSJ25N120R1
Description
1200V 62M (25A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time
35 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id
4.8V @ 5.3mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 18 V
Vgs (Max)
+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1435 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
75.3W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
ISO247-3L
Package / Case
TO-247-3
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In-Stock: 288
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 535,72000 Ft4 535,72 Ft
302 755,16600 Ft82 654,98 Ft
1202 364,91483 Ft283 789,78 Ft
5102 292,07827 Ft1 168 959,92 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 535,72000 Ft
Unit Price with VAT:5 760,36440 Ft