Name: IXSH65N120L2KHV
Brand: IXYS
SKU: 238-IXSH65N120L2KHV-ND
Price: 4701.159 HUF
Availability: OutOfStock

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IXSH65N120L2KHV
DigiKey Part Number	238-IXSH65N120L2KHV-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSH65N120L2KHV
Description	1200V 40M (65A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 65A (Tc) 375W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.5V @ 9mA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 110 nC @ 18 V
Packaging Tube	Vgs (Max) +20V, -5V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2160 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 375W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 65A (Tc)	Supplier Device Package TO-247-4L
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V

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Unit Price without VAT:	3 701,70000 Ft
Unit Price with VAT:	4 701,15900 Ft

IXSH65N120L2KHV