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TO-247-4
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TO-247-4
8PowerSFN

IXSH100N65L2KHV

DigiKey Part Number
238-IXSH100N65L2KHV-ND
Manufacturer
IXYS
Manufacturer Product Number
IXSH100N65L2KHV
Description
650V 25M (100A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 99A (Tc) 454W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
454W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 724,63000 Ft3 724,63 Ft
102 577,73700 Ft25 777,37 Ft
4501 770,17960 Ft796 580,82 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 724,63000 Ft
Unit Price with VAT:4 730,28010 Ft