IXYX110N120A4
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IXFH80N65X2

DigiKey Part Number
238-IXFH80N65X2-ND
Manufacturer
IXYS
Manufacturer Product Number
IXFH80N65X2
Description
MOSFET N-CH 650V 80A TO247
Manufacturer Standard Lead Time
34 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
HiPerFET™, Ultra X2
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
8245 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXFH80
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In-Stock: 5 288
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 256,72000 Ft5 256,72 Ft
303 232,48067 Ft96 974,42 Ft
1202 789,41967 Ft334 730,36 Ft
5102 770,33510 Ft1 412 870,90 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 256,72000 Ft
Unit Price with VAT:6 676,03440 Ft