Name: IQE013N04LM6CGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQE013N04LM6CGSCATMA1TR-ND
Price: 1569.466 HUF
Availability: InStock

N-Channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-WHTFN-9-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQE013N04LM6CGSCATMA1
DigiKey Part Number	448-IQE013N04LM6CGSCATMA1TR-ND - Tape & Reel (TR) 448-IQE013N04LM6CGSCATMA1CT-ND - Cut Tape (CT) 448-IQE013N04LM6CGSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQE013N04LM6CGSCATMA1
Description	OPTIMOS LOWVOLTAGE POWER MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-WHTFN-9-1
Datasheet	Datasheet
EDA/CAD Models	IQE013N04LM6CGSCATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9-1
Package / Case	9-PowerWDFN