N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3
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IPP60R099CPXKSA1

DigiKey Part Number
IPP60R099CPXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP60R099CPXKSA1
Description
MOSFET N-CH 650V 31A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R099CPXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
255W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP60R099
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In-Stock: 1 375
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 628,58000 Ft2 628,58 Ft
501 415,35840 Ft70 767,92 Ft
1001 298,39160 Ft129 839,16 Ft
5001 093,64292 Ft546 821,46 Ft
1 0001 027,93844 Ft1 027 938,44 Ft
2 0001 024,12750 Ft2 048 255,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 628,58000 Ft
Unit Price with VAT:3 338,29660 Ft