Name: IPP120N08S403AKSA1
Brand: Infineon Technologies
SKU: 448-IPP120N08S403AKSA1-ND
Price: 3256.4451 HUF
Availability: InStock

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IPP120N08S403AKSA1
DigiKey Part Number	448-IPP120N08S403AKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP120N08S403AKSA1
Description	MOSFET N-CH 80V 120A TO220-3
Customer Reference
Detailed Description	N-Channel 80 V 120A (Tc) 278W (Tc) Through Hole PG-TO220-3-1
Datasheet	Datasheet
EDA/CAD Models	IPP120N08S403AKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series OptiMOS™	Input Capacitance (Ciss) (Max) @ Vds 11550 pF @ 25 V
Packaging Tube	Power Dissipation (Max) 278W (Tc)
Part Status Not For New Designs	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 80 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 120A (Tc)	Supplier Device Package PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-220-3
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V	Base Product Number IPP120
Vgs(th) (Max) @ Id 4V @ 223µA

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
FDP036N10A	onsemi	1 809	FDP036N10A-ND	1 940,01000 Ft	Similar
TK100E08N1,S1X	Toshiba Semiconductor and Storage	90	TK100E08N1S1X-ND	1 900,04000 Ft	Similar

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