Name: IPD30N03S4L09ATMA1
Brand: Infineon Technologies
SKU: IPD30N03S4L09ATMA1TR-ND
Price: 572.9351 HUF
Availability: InStock

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IPD30N03S4L09ATMA1
DigiKey Part Number	IPD30N03S4L09ATMA1TR-ND - Tape & Reel (TR) IPD30N03S4L09ATMA1CT-ND - Cut Tape (CT) IPD30N03S4L09ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD30N03S4L09ATMA1
Description	MOSFET N-CH 30V 30A TO252-3
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3-11
Datasheet	Datasheet
EDA/CAD Models	IPD30N03S4L09ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±16V
Series OptiMOS™	Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 15 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 42W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 30 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Supplier Device Package PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V	Base Product Number IPD30N03
Vgs(th) (Max) @ Id 2.2V @ 13µA

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