Name: IMZC120R007M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZC120R007M2HXKSA1-ND
Price: 18368.9117 HUF
Availability: InStock

N-Channel 1200 V 201A (Tc) 711W (Tc) Through Hole PG-TO247-4-17

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IMZC120R007M2HXKSA1
DigiKey Part Number	448-IMZC120R007M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZC120R007M2HXKSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	54 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 201A (Tc) 711W (Tc) Through Hole PG-TO247-4-17
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 7.5mOhm @ 93A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.1V @ 29.1mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 176 nC @ 18 V
Packaging Tube	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 6570 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 711W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 201A (Tc)	Supplier Device Package PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4