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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMZA75R008M1HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMZA75R008M1HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMZA75R008M1HXKSA1 |
Description | SILICON CARBIDE MOSFET |
Customer Reference | |
Detailed Description | N-Channel 750 V 163A (Tc) 517W (Tc) Through Hole PG-TO247-4-U02 |
Datasheet | Datasheet |
EDA/CAD Models | IMZA75R008M1HXKSA1 Models |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Not For New Designs | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 750 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | |
Rds On (Max) @ Id, Vgs | 7.2mOhm @ 90.3A, 20V | |
Vgs(th) (Max) @ Id | 5.6V @ 32.4mA | |
Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 500 V | |
Vgs (Max) | +23V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 6137 pF @ 500 V | |
FET Feature | - | |
Power Dissipation (Max) | 517W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-4-U02 | |
Package / Case |
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Quantity
All prices are in HUF
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | 12 504,96000 Ft | 12 504,96 Ft |
| 30 | 8 255,25533 Ft | 247 657,66 Ft |
| 120 | 7 652,10700 Ft | 918 252,84 Ft |
| Unit Price without VAT: | 12 504,96000 Ft |
|---|---|
| Unit Price with VAT: | 15 881,29920 Ft |
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