N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
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IMZA65R057M1HXKSA1

DigiKey Part Number
448-IMZA65R057M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R057M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Customer Reference
Detailed Description
N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R057M1HXKSA1 Models
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V
Mfr
Vgs(th) (Max) @ Id
5.7V @ 5mA
Series
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Packaging
Tube
Vgs (Max)
+20V, -2V
Part Status
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V
FET Type
Power Dissipation (Max)
133W (Tc)
Technology
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 15
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 332,76000 Ft3 332,76 Ft
301 947,69567 Ft58 430,87 Ft
1201 643,65333 Ft197 238,40 Ft
5101 420,93141 Ft724 675,02 Ft
1 0201 339,71036 Ft1 366 504,57 Ft
2 0101 272,81088 Ft2 558 349,87 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 332,76000 Ft
Unit Price with VAT:4 232,60520 Ft