N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-4-3
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IMZA65R048M1HXKSA1

DigiKey Part Number
448-IMZA65R048M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R048M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Customer Reference
Detailed Description
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R048M1HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id
5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1118 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
Base Product Number
Product Questions and Answers

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In-Stock: 95
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 046,08000 Ft3 046,08 Ft
301 793,58000 Ft53 807,40 Ft
1201 518,33617 Ft182 200,34 Ft
5101 418,03957 Ft723 200,18 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 046,08000 Ft
Unit Price with VAT:3 868,52160 Ft