N-Channel 650 V 171A (Tc) 625W (Tc) Through Hole PG-TO247-3-U06
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IMW65R007M2HXKSA1

DigiKey Part Number
448-IMW65R007M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R007M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 171A (Tc) 625W (Tc) Through Hole PG-TO247-3-U06
Datasheet
 Datasheet
EDA/CAD Models
IMW65R007M2HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V
Vgs(th) (Max) @ Id
5.6V @ 29.7mA
Gate Charge (Qg) (Max) @ Vgs
179 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
6359 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
625W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-U06
Package / Case
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In-Stock: 275
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
19 555,74000 Ft9 555,74 Ft
306 197,25867 Ft185 917,76 Ft
1205 943,97533 Ft713 277,04 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:9 555,74000 Ft
Unit Price with VAT:12 135,78980 Ft