IPW65R099CFD7AXKSA1
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IMW120R090M1HXKSA1

DigiKey Part Number
IMW120R090M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW120R090M1HXKSA1
Description
SICFET N-CH 1.2KV 26A TO247-3
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW120R090M1HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
707 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
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In-Stock: 475
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 762,46000 Ft2 762,46 Ft
301 611,77033 Ft48 353,11 Ft
1201 359,07558 Ft163 089,07 Ft
5101 244,07331 Ft634 477,39 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 762,46000 Ft
Unit Price with VAT:3 508,32420 Ft