Name: IGLD65R110D2AUMA1
Brand: Infineon Technologies
SKU: 448-IGLD65R110D2AUMA1TR-ND
Price: 2167.8773 HUF
Availability: InStock

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IGLD65R110D2AUMA1
DigiKey Part Number	448-IGLD65R110D2AUMA1TR-ND - Tape & Reel (TR) 448-IGLD65R110D2AUMA1CT-ND - Cut Tape (CT) 448-IGLD65R110D2AUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGLD65R110D2AUMA1
Description	GANFET N-CH 650V 14A 8LDFN
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 14A (Tc) 51W (Tc) Surface Mount PG-LSON-8-2
Datasheet	Datasheet
EDA/CAD Models	IGLD65R110D2AUMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1.6V @ 1.3mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 3 V
Series CoolGaN™ G5	Vgs (Max) -10V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 400 V
Part Status Active	Power Dissipation (Max) 51W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-LSON-8-2
Current - Continuous Drain (Id) @ 25°C 14A (Tc)	Package / Case 8-LDFN Exposed Pad
Rds On (Max) @ Id, Vgs 140mOhm @ 4A