Diode 650 V 10A Through Hole PG-TO247-3
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Diode 650 V 10A Through Hole PG-TO247-3
PG-TO247-3

IDW20G65C5BXKSA2

DigiKey Part Number
448-IDW20G65C5BXKSA2-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IDW20G65C5BXKSA2
Description
DIODE SIL CARB 650V 10A PGTO2473
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
Diode 650 V 10A Through Hole PG-TO247-3
Datasheet
 Datasheet
EDA/CAD Models
IDW20G65C5BXKSA2 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™+
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
180 µA @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
IDW20G65
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In-Stock: 53
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 665,32000 Ft2 665,32 Ft
301 546,64267 Ft46 399,28 Ft
1201 301,04133 Ft156 124,96 Ft
5101 140,73443 Ft581 774,56 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 665,32000 Ft
Unit Price with VAT:3 384,95640 Ft