Name: AIMW120R060M1HXKSA1
Brand: Infineon Technologies
SKU: 448-AIMW120R060M1HXKSA1-ND
Price: 13847.3307 HUF
Availability: InStock

N-Channel 1200 V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41

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AIMW120R060M1HXKSA1
DigiKey Part Number	448-AIMW120R060M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMW120R060M1HXKSA1
Description	1200V COOLSIC MOSFET PG-TO247-3
Customer Reference
Detailed Description	N-Channel 1200 V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
Datasheet	Datasheet
EDA/CAD Models	AIMW120R060M1HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Series CoolSiC™	Vgs (Max) +23V, -7V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
Part Status Not For New Designs	Power Dissipation (Max) 150W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 36A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 18V	Supplier Device Package PG-TO247-3-41
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V	Package / Case TO-247-3

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
DMWSH120H90SM3Q	Diodes Incorporated	24	31-DMWSH120H90SM3Q-ND	4 499,14000 Ft	Similar
MSC040SMA120B4	Microchip Technology	34	150-MSC040SMA120B4-ND	5 325,21000 Ft	Similar