Name: AIMW120R045M1XKSA1
Brand: Infineon Technologies
SKU: 448-AIMW120R045M1XKSA1-ND
Price: 9822.4594 HUF
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMW120R045M1XKSA1
DigiKey Part Number	448-AIMW120R045M1XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMW120R045M1XKSA1
Description	SICFET N-CH 1200V 52A TO247-3
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
Datasheet	Datasheet
EDA/CAD Models	AIMW120R045M1XKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 15 V
Vgs (Max)	+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds	2130 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	228W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
Base Product Number	AIMW120