GT700P08T
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GC20N65T

DigiKey Part Number
3141-GC20N65T-ND
Manufacturer
Goford Semiconductor
Manufacturer Product Number
GC20N65T
Description
N650V,RD(MAX)<170M@10V,VTH2.5V~4
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 20A (Tc) 151W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Goford Semiconductor
Series
SuperJunction
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1724 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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In-Stock: 22
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 284,01000 Ft1 284,01 Ft
50650,51920 Ft32 525,96 Ft
100589,26890 Ft58 926,89 Ft
500481,96210 Ft240 981,05 Ft
1 000447,49505 Ft447 495,05 Ft
2 000427,44375 Ft854 887,50 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 284,01000 Ft
Unit Price with VAT:1 630,69270 Ft