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Cascode GaN FETs
Nexperia GaN FETs offer performance, efficiency, and reliability of power systems
Nexperia cascode GaN FETs offer high power density, performance, and switching frequency. The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability, which are vital in next-generation power systems, such as Industry 4.0 and renewable energy applications. The unique cascode GaN FET solution facilitates easy driving of devices using well-known Si MOSFET gate drivers. They deliver unmatched high junction temperature [Tj (max) = +175°C], design freedom, and improved reliability of power systems.
Cascode GaN FETs
| Kép | Gyártói cikkszám | Leírás | Available Quantity | Ár | Részletek megtekintése | |
|---|---|---|---|---|---|---|
 |  | GAN041-650WSBQ | GAN041-650WSB/SOT429/TO-247 | 175 - Immediate | $4,577.93 | Részletek megtekintése |
| | GAN063-650WSAQ | GANFET N-CH 650V 34.5A TO247-3 | 0 - Immediate | $3,520.30 | Részletek megtekintése |
|  | GAN039-650NBBHP | 650 V, 33 MOHM GALLIUM NITRIDE ( | 817 - Immediate | $4,648.64 | Részletek megtekintése |
|  | GAN111-650WSBQ | GAN111-650WSB/SOT429/TO-247 | 309 - Immediate | $3,646.36 | Részletek megtekintése |
|  | GAN039-650NTBZ | 650 V, 33 MOHM GALLIUM NITRIDE ( | 0 - Immediate | $3,658.66 | Részletek megtekintése |
| | GAN039-650NTBJ | GAN CASCODE FETS | 576 - Immediate | $4,648.64 | Részletek megtekintése |
Published: 2024-09-04
