Silicon Carbide (SiC) MOSFETs and Diodes

Diodes Incorporated WBG materials offer advantages over silicon for many reasons, such as allowing SiC to withstand voltages up to five times (3 kV) greater than silicon with higher breakdown voltage (BV). SiC can also switch up to 10 times faster than silicon, resulting in minimal switching losses. Three times better thermal conductivity also means better power dissipation and smaller heatsinks. As a result, SiC is more suitable than GaN for high-power applications due to better thermal conductivity and packing density.

SiC MOSFETs

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, including higher switching frequencies and reduced size of components like inductors, capacitors, filters, and transformers.

Diodes 1200 V SiC MOSFETs are designed for high voltage switching power applications that demand the highest efficiency and compact design. They feature high output current, low on-resistance, and industry-standard TO263-7, TO247, and TO247-4 packages, perfect for motor drives, DC/DC converters, solar inverters, and EV battery charger applications.

SiC Diodes

Diodes SiC Schottky diodes range from 650 V to 1200 V. They are available in a wide variety of packages, from insulated TO220, standard TO220, and TO252, which offer great flexibility to designers looking for efficiency, robustness, and fast time-to-market. Diodes automotive-grade 650 V and 1200 V SiC diodes are AEC-Q101 qualified.