EPC9080: 30A, 0 ~ 100V, Half H-Bridge

The EPC9080 development board is a 100 V maximum device voltage 30 A maximum output current, half bridge with onboard gate drives, featuring the EPC2045 (EPC2204 is the recommended replacement) and EPC2022 enhancement mode (eGaN®) field effect transistors (FETs) designed for high step down, high current applications. The purpose of this development board is to simplify the evaluation process of the EPC2045 (EPC2204 is the recommended replacement) and EPC2022 eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9080 development board is 2” x 2” and contains one high side EPC2045 (EPC2204 is the recommended replacement) eGaN FET and one low side EPC2022 eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver. The board also contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram ofthe circuit is given in figure 1.

For more information on the EPC2045 (EPC2204 is the recommended replacement) and EPC2022 please refer to the datasheet which should be read in conjunction with this quick start guide. GaN