The EPC9057 development board is a 80 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2039 (EPC2214 is the recommended replacement, 10A) enhancement mode (eGaN®) FET.
The purpose of this development board is to simplify the evaluation processof the EPC2039 eGaN FET by including all the critical components ona single board that can be easily connected into any existing converter.
The EPC9057 development board is 2” x 1.5” and contains not only two EPC2039 eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram ofthe circuit is given in Figure 1.
For more information on the EPC2039s eGaN FET (now EPC2214) please refer to the datasheet which should be read in conjunction with this quick start guide. GaN
| Manufacturer | EPC |
|---|---|
| Category | Power Management |
| Sub-Category | Power Output Stages (H-Bridge, Half Bridge) |
| Eval Board Part Number | 917-1120-ND |
| Eval Board Supplier | EPC |
| Eval Board |
Board not Stocked
|
| Configuration |
1 Half H-Bridge
|
| Voltage Out Range |
0 ~ 80 V
|
| Current Out |
6 A
|
| Interface |
PWM, Dual
|
| Features |
Internal Bootstrap Circuit
Under Voltage Protection (UVP) |
| Switching Frequency (Max) |
Not given
|
| Component Count + Extras |
27 + 7
|
| Design Author |
EPC
|
| Main I.C. Base Part |
EPC2039
EPC2214 |
| Date Created By Author | 2015-09 |
| Date Added To Library | 2017-04 |
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