80 V UMOS-X Power MOSFETs

Toshiba’s 80 V MOSFETs offer excellent R_DS(ON) due to the UMOS-X trench structure. This low-voltage process helps reduce conduction loss, which overall helps reduce power consumption in devices. This process also carries on previous generational benefits such as low gate switch charge. These 80 V MOSFETs offer a low figure of merit, which characterizes the trade-off between ON-resistance and gate charge.

These devices are suitable for switching power supplies on industrial equipment, including high-efficiency AC/DC and DC/DC converters. Other applications include driving motor control equipment. Current package options include through-hole TO-220 and isolated TO-220SIS, along with a surface-mount DPAK.

Features

• Low ON-resistance: R_DS(ON) = 2.44 mΩ (max) at V_GS = 10 V (TK2R4E08QM)
• Low charge (output and gate switch)
• Low gate voltage drive (6 V drive)

Applications

• Switching power supplies for industrial equipment (high-efficiency AC/DC converters, high-efficiency DC/DC converters, and others)
• Motor control equipment (such as motor drivers)