AEM Central Semiconductor

Surface-Mount GaN N-Channel Power FET

Central Semiconductor FETs are designed for high-frequency applications with high efficiency standards

Image of Central Semiconductor Surface-Mount GaN N-Channel Power FETCombining high voltage capability with low RDS(ON), Central Semiconductor N-channel GaN FETs are designed for high-frequency applications with high standards of efficiency. These GaN FETs are offered in 100 V supporting 60 A or 650 V supporting 11 A or 17 A. They are provided in a variety of low-profile surface-mount packages..

Features
  • High voltage capability: 700 V
  • Low gate charge and RDS(ON) as low as 3.2 mΩ
  • Efficient fast switching
  • Space-saving DFN and CSP
Applications
  • Alternative energy inverters
  • Battery management systems (BMS)
  • High-efficiency power supplies
  • Electric vehicle charging
Published: 2024-09-06