Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) – BSD Series

Bourns' expands their portfolio of BSD series SiC SBDs that are designed for high frequency and high current applications requiring increased peak forward surge capability, low forward voltage drop, reduced thermal resistance, and low power loss. These advanced wide band gap components are ideal power conversion solutions to help increase reliability, switching performance, and efficiency in applications such as DC-DC and AC-DC converters, switched-mode power supplies (SMPS), photovoltaic inverters, motor drives, and other rectification designs.

In addition to offering 650 V to 1200 V voltage operation with currents in the 5 A to 10 A range, the BSD models feature no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses, further increasing efficiency. Providing excellent thermal performance and high power density along with various forward voltage, current, and package options that include TO220-2, TO247-2, TO247-3, TO252, TO263, and DFN8x8, the six BSD models give designers the higher power density necessary to match their application specifications while helping them develop smaller, state-of-the-art power electronics.