Integrated Silicon Solution, Inc. (ISSI) announces that it has begun sampling production units of automotive grade serial (SPI) and parallel SLC NAND Flash. ISSI’s SLC NAND Flash product supports a wide operating temperature range of -40°C to +105°C, making it ideal for the next generation automotive, industrial, and Internet of Things (IoT) applications. Both the SPI NAND and parallel NAND Flash devices are AEC-Q100 qualified meeting the stringent automotive qualification requirements. The SPI NAND is currently available in 1 Gb density while the parallel SLC NAND is available in 1 Gb, 2 Gb, and 4 Gb densities. ISSI is working on additional densities of NAND Flash and multi-chip package (MCP) options of serial/parallel NAND/NOR Flash and its DRAM product line.
In addition to the SPI NAND and parallel NAND Flash, ISSI offers a multitude of DRAMs including SDR, DDR2, DDR3, and mobile SDR, LPDDR, LPDDR2; a complete line of both asynchronous and synchronous SRAMs with densities from 64 Kb to 72 Mb; and a broad portfolio of NOR Flash from 256 Kb to 512 Mb.
- Supply voltage
- IS34/35 ML-series: VCC = 2.7 V to 3.6 V
- IS34/35 MW-series: VCC = 1.7 V to 1.95 V
- Flexible x8 or x16 options
- Cost effective uniform blocks
- Typ block erase times of 3 ms
- Automatic read operations
- Hardware data protection
- 100 K program/erase cycles
- 10-year data retention
- Supports 1- or 4-bit ECC per 512 Byte
SLC NAND Flash for Automotive and Industrial Markets